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MOCVD epitaxial growth area

Arima PV&O utilizes MOCVD technology to grow epitaxial wafers. 

Standard wafer size is 4-inch. Other wafer sizes including 2 inch, 3 inch and 6 inch are also available.
Arima PV&O’s standard epitaxial products are 
-GaInP/InGaAs/Ge triple junction solar epi wafers,
-GaInP/GaAs dual junction solar epi wafers and
-GaAs single junction solar epi wafers. 

Other customized epi wafer is also available upon request.

  • Introduction
MOCVD, Metal-organic Chemical Vapor Deposition, is to grow epitaxial thin film on the substrate.  Other names used including 
    (1) MOVPE (Metal-Organic Vapor-Phase Epitaxy), 
    (2) OMVPE (Organometallic Vapor-Phase Epitaxy) and 
    (3) OMCVD (Organometallic Chemical Vapor Deposition).  
    The first two letters "MO" or "OM“ means the reagent source (precursor) is either the “metal-organic" or the “organnometallic compounds”.

MOCVD – technical advantages 
    (1) can grow a variety of compound semiconductors;
    (2) can grow high-quality materials; 
    (3) can grow thin epitaxial layers;
    (4) can grow hetero-structures;
    (5) the grown thin film with good uniformity on large area, 
    (6) Best technology for high volume production.